As a part of JST PRESTO program, associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Abstract: In this work, vertical GaN trench MOSFETs have been fabricated by implementing hafnium oxide (HfO2) layered with aluminum oxide (Al2O3) as gate dielectric to improve the device performance ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Abstract: In this work, the switching dynamics of HfO2–ZrO2 nanolaminate ferroelectric (FE) films with different laminate thicknesses are investigated. Metal/FE layer/metal capacitors with HfO2–ZrO2 ...
The results were reported in a paper, “16kbit HfO 2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility”, at IEDM 2021. “This ultralow-power, fast, ...
Department of Materials Physics, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan Department of Materials Physics, Graduate School of Engineering, Nagoya ...
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ABSTRACT: The dependence of the polarization P in Hf1-xZrxO2 nanoparticles on electric field, dopant concentration x, size and temperature are studied using the transverse Ising model and the Green’s ...
ABSTRACT: The dependence of the polarization P in Hf1-xZrxO2 nanoparticles on electric field, dopant concentration x, size and temperature are studied using the transverse Ising model and the Green’s ...
The outstanding remanent polarization of 40 µC cm–2 reported for a 10 nm thin La:HfO2 film in 2013 has attracted much attention. However, up to now, no explanation for this large remanent polarization ...
As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ...
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