Abstract: This work reports the demonstration of AlN trench metal-oxide-semiconductor transistors (MOSFETs) on single-crystal AlN substrates, where the impacts of gate trench depth were investigated.
Abstract: Amorphous oxide semiconductors, such as indium tin oxide (ITO), have gained attention for their largescale, low-temperature deposition, making them attractive for back-end-of-line (BEOL) ...
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